File Name: wet etching and dry etching .zip
The etch process removes selected areas from the surface of the wafer so that other materials may be deposited. Typically, part of the wafer is protected during the etch by an etch-resistant "masking" material, such as photoresist or a hard mask such as silicon nitride. Etch processes are referred to as dielectric etch or conductor etch to indicate the types of films that are removed from the wafer. For example, dielectric etch is employed to etch via holes and trenches for metal conductive paths; conductor etch removes polysilicon to create the gate in a transistor , or aluminum and tungsten to reveal the pattern of circuitry in the device structure. A plasma containing oxygen is used to oxidize "ash" photoresist and facilitate its removal.
Encyclopedia of Nanotechnology Living Edition. Editors: Bharat Bhushan. Contents Search. Dry Etching Processes. Nayak V. Logeeswaran M. Living reference work entry First Online: 21 November How to cite. Synonyms Chemical dry etching ; Gas etching ; Physical-chemical etching ; Physical dry etching ; Plasma etching.
Physical dry etching requires high energy kinetic energy ion, electron, or photon beams to etch off the substrate atoms. When the high-energy particles knock out the atoms from the substrate surface, the material evaporates after leaving the substrate. There is no chemical reaction taking place and therefore only the material that is unmasked will be removed. The physical reaction taking place is illustrated in Fig 1.
Open image in new window. This process is experimental and the keywords may be updated as the learning algorithm improves. This is a preview of subscription content, log in to check access. Marc, J. Logeeswaran, V. IEEE J. Quantum Electron. Hakan, K. Status Solidi A. Chen, et al. Nayak 1 2 V. Logeeswaran 1 2 M.
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Folder Name. Folder Description. Wet etching. Integrated circuits. Dry etching. Plasma etching. Show All Keywords.
Dry etching refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions usually a plasma of reactive gases such as fluorocarbons , oxygen , chlorine , boron trichloride ; sometimes with addition of nitrogen , argon , helium and other gases that dislodge portions of the material from the exposed surface. A common type of dry etching is reactive-ion etching. Unlike with many but not all, see isotropic etching of the wet chemical etchants used in wet etching , the dry etching process typically etches directionally or anisotropically. Dry etching is used in conjunction with photolithographic techniques to attack certain areas of a semiconductor surface in order to form recesses in material, such as contact holes which are contacts to the underlying semiconductor substrate or via holes which are holes that are formed to provide an interconnect path between conductive layers in the layered semiconductor device or to otherwise remove portions of semiconductor layers where predominantly vertical sides are desired. Along with semiconductor manufacturing, micromachining and display production, the removal of organic residues by oxygen plasmas is sometimes correctly described as a dry etch process.
The advantages of wet etching processes are relatively fast with high etch rates. The simple equipment baths or spraying of wet chemistry can have high selectivity. The wet process typical etching agent are liquid solvents, corrosive leeches and acids.
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